类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 输出的数量 | 资历状况 | 最大输出电流 | 配置 | 通道数量 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 每个通道的输出电流 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||
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![]() | DMN32D2LV-7 | Diodes Incorporated | 数据表 | 104356 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 3.005049mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 400mW | FLAT | 260 | 40 | DMN32D2LV | 6 | R-PDSO-F6 | 2 | Dual | 增强型MOSFET | 2 N-Channel (Dual) | SWITCHING | 1.2 Ω @ 100mA, 4V | 1.2V @ 250μA | 39pF @ 3V | 30V | 400mA | 10V | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP210DUDJ-7 | Diodes Incorporated | 数据表 | 43860 In Stock | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 表面贴装 | 表面贴装 | SOT-963 | 6 | SILICON | 2 | 25.9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY, LOW THRESHOLD | 330mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 330mW | 7.7 ns | 2 P-Channel (Dual) | SWITCHING | 5.5 Ω @ 100mA, 4.5V | 1.15V @ 250μA | 27.44pF @ 15V | 19.3ns | 20V | 31.5 ns | 200mA | 8V | 0.14A | 5Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD85302LT | Texas Instruments | 数据表 | 478 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 4-XFLGA | 4 | SILICON | 2 | 173 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | yes | 活跃 | 1 (Unlimited) | 4 | 1.7W | BOTTOM | 无铅 | CSD85302 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | 37 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 7.8nC @ 4.5V | 54ns | 20V | 99 ns | 7A | 900mV | 10V | METAL-OXIDE SEMICONDUCTOR | Standard | 24mOhm | 79 pF | 1.35mm | 1.35mm | 200μm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K29-100E,115 | Nexperia USA Inc. | 数据表 | 12000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | 67.3 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 雪崩 额定 | 68W | 鸥翼 | not_compliant | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 2 | Dual | 增强型MOSFET | 68W | DRAIN | 6.1 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 10A, 10V | 2.1V @ 1mA | 3491pF @ 25V | 54nC @ 10V | 6.4ns | 35.1 ns | 30A | 10V | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87384M | Texas Instruments | 数据表 | 1200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 5-LGA | 5 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 8W | BOTTOM | 无铅 | 260 | 未说明 | CSD87384 | 1 | 95A | COMPLEX | 增强型MOSFET | 2 N-Channel (Half Bridge) | SWITCHING | 7.7m Ω @ 25A, 8V | 1.9V @ 250μA | 30A | 1150pF @ 15V | 9.2nC @ 4.5V | 30V | 30A | 0.0089Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5mm | 3.5mm | 400μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDG6301N-F085P | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 220mA Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q101 | yes | 活跃 | 1 (Unlimited) | 6 | 鸥翼 | 未说明 | 未说明 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 300mW | 2 N-Channel (Dual) | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 9.5pF @ 10V | 0.4nC @ 4.5V | 25V | 0.22A | 4Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K45-100EX | Nexperia USA Inc. | 数据表 | 3933 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 6 | 53W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 53W | 2 N-Channel (Dual) | SWITCHING | 37.6m Ω @ 5A, 10V | 4V @ 1mA | 1533pF @ 25V | 25.9nC @ 10V | 100V | 21.4A | 0.0376Ohm | 100V | 46 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF5850TRPBF | Infineon Technologies | 数据表 | 300000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 6-TSOP | 2.2A | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 2 (1 Year) | 150°C | -55°C | 960mW | IRF5850PBF | Dual | 960mW | 8.3 ns | 960mW | 2 P-Channel (Dual) | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250μA | 320pF @ 15V | 5.4nC @ 4.5V | 14ns | 20V | 28 ns | -2.2A | 12V | -20V | 320pF | 逻辑电平门 | 220mOhm | 135 mΩ | 1.143mm | 2.9972mm | 1.75mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS4935 | ON Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 48 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | ESD PROTECTION | -30V | 900mW | 鸥翼 | 未说明 | -7A | 未说明 | 不合格 | 30V | 7A | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 23m Ω @ 7A, 10V | 3V @ 250μA | 1233pF @ 15V | 21nC @ 5V | 10ns | 25 ns | 7A | 25V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2036UCB4-7 | Diodes Incorporated | 数据表 | 2897 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 4-XFBGA, WLBGA | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | e1 | 活跃 | 1 (Unlimited) | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 未说明 | 未说明 | 1.45W | 2 N-Channel (Dual) Common Drain | 12.6nC @ 4.5V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS4DPF30L | STMicroelectronics | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 125 ns | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 80mOhm | Matte Tin (Sn) - annealed | -30V | 2W | 鸥翼 | 260 | -4A | 30 | STS4D | 8 | Single | 增强型MOSFET | 2W | 25 ns | 2 P-Channel (Dual) | SWITCHING | 80m Ω @ 2A, 10V | 1V @ 250μA | 1350pF @ 25V | 16nC @ 5V | 35ns | 30V | 35 ns | 4A | 1V | 16V | 4A | -30V | 16A | METAL-OXIDE SEMICONDUCTOR | Standard | 1.25mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
![]() | DMP2100UCB9-7 | Diodes Incorporated | 数据表 | 1278 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 9-UFBGA, WLBGA | 9 | SILICON | 2 | 47 ns | -55°C~150°C TJ | Cut Tape (CT) | 2014 | e1 | yes | Obsolete | 1 (Unlimited) | 9 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 800mW | BOTTOM | BALL | 260 | 40 | AEC-Q101 | 2 | 增强型MOSFET | 8.5 ns | 2 P-Channel (Dual) Common Source | SWITCHING | 100m Ω @ 1A, 4.5V | 900mV @ 250μA | 310pF @ 10V | 4.2nC @ 4.5V | 7ns | 20V | 28 ns | 3A | -6V | 3A | 0.0175Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 55 pF | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
TK6A65D(STA4,X,M) | TOSHIBA | 数据表 | 8550 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 通孔 | 3 | Non-Compliant | 75 ns | 150 °C | 45 W | Single | 60 ns | 6 A | 30 V | 1.05 nF | 1.11 Ω | 15 mm | 10 mm | 4.5 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FW276-TL-2H | ON Semiconductor | 数据表 | 642 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 15 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin (Sn) | 1.6W | 未说明 | 未说明 | 2W | 7 ns | 2 N-Channel (Dual) | 12.1 Ω @ 350mA, 10V | 4.5V @ 1mA | 55pF @ 20V | 3.7nC @ 10V | 450V | 700mA | 4.5V | 30V | 逻辑电平门 | 1.375mm | 4.9mm | 3.9mm | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K18-40EX | Nexperia USA Inc. | 数据表 | 6291000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 6 | 38W | 鸥翼 | 未说明 | 未说明 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 38W | 2 N-Channel (Dual) | SWITCHING | 19m Ω @ 10A, 10V | 4V @ 1mA | 808pF @ 25V | 11.8nC @ 10V | 40V | 24.2A | 0.019Ohm | 127A | 40V | 26.3 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN3035LWN-7 | Diodes Incorporated | 数据表 | 1718 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 770mW | 无铅 | 未说明 | 未说明 | R-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 770mW | 2 N-Channel (Dual) | SWITCHING | 35m Ω @ 4.8A, 10V | 2V @ 250μA | 399pF @ 15V | 9.9nC @ 10V | 30V | 5.5A | 0.035Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EM6J1T2R | ROHM Semiconductor | 数据表 | 8000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | SILICON | 2 | 17 ns | 150°C TJ | Tape & Reel (TR) | 2009 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Copper (Sn/Cu) | 150mW | FLAT | 260 | 10 | *J1 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 150mW | 6 ns | 2 P-Channel (Dual) | SWITCHING | 1.2 Ω @ 200mA, 4.5V | 1V @ 100μA | 115pF @ 10V | 1.4nC @ 4.5V | 4ns | 20V | 17 ns | 200mA | 10V | 0.2A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
AO4622 | Alpha & Omega Semiconductor Inc. | 数据表 | 10200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 8 | 2W | DUAL | 鸥翼 | 8 | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 23m Ω @ 7.3A, 10V | 2V @ 250μA | 1100pF @ 10V | 18nC @ 10V | 20V | N-CHANNEL AND P-CHANNEL | 35A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDME1023PZT | ON Semiconductor | 数据表 | 740 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | 6 | 25.2mg | SILICON | 33 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | ESD PROTECTION | 1.4W | Dual | 增强型MOSFET | 1.3W | DRAIN | 4.7 ns | 600mW | 2 P-Channel (Dual) | SWITCHING | 142m Ω @ 2.3A, 4.5V | 1V @ 250μA | 405pF @ 10V | 7.7nC @ 4.5V | 4.8ns | 20V | 16 ns | 2.6A | -600mV | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -600 mV | 75 pF | 500μm | 1.6mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
2N7002KA-RTK/H | KEC Semicon | 数据表 | 563985 In Stock |
- | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C446NLWFT1G | ON Semiconductor | 数据表 | 1325 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 25A Ta 145A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | not_compliant | 未说明 | 3.5W Ta | 2 N-Channel (Dual) | 2.65m Ω @ 20A, 10V | 2.2V @ 90μA | 3170pF @ 25V | 25nC @ 4.5V | 40V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTMD6N04R2G | ON Semiconductor | 数据表 | 79999 In Stock | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 3 days ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 2 | 30 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 1.5W | 鸥翼 | NTMD6N04 | 8 | Dual | 增强型MOSFET | 2W | 15 ns | 1.29W | 2 N-Channel (Dual) | SWITCHING | 34m Ω @ 5.8A, 10V | 3V @ 250μA | 900pF @ 32V | 30nC @ 10V | 55ns | 40V | 35 ns | 4.6A | 20V | 0.034Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDT290UCE,115 | Nexperia USA Inc. | 数据表 | 43 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 800mA 550mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 500mW | FLAT | 6 | Dual | 增强型MOSFET | 330mW | N and P-Channel | SWITCHING | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 83pF @ 10V | 0.68nC @ 4.5V | 30ns | 20V | N-CHANNEL AND P-CHANNEL | 72 ns | 550mA | 8V | 0.8A | 0.38Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS4885C | ON Semiconductor | 数据表 | 10 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.5A 6A | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | PowerTrench® | Obsolete | 1 (Unlimited) | 900mW | N and P-Channel | 22m Ω @ 7.5A, 10V | 5V @ 250μA | 900pF @ 20V | 21nC @ 10V | 40V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA2371T1P-E1-A | Renesas | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 4-UFLGA | 4-EFLIP (1.62x1.62) | Bulk | Renesas | Obsolete | 6A | - | - | - | 2 N-Channel (Dual) | - | - | - | - | 24V | Standard |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
